• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The plasma processing apparatus which realizes generation of a parallel plate plasma by low-pressure discharge, and is capable of uniformly high-speed processing of a large aperture sample in a high vacuum atmosphere. The plasma source is installed around the electrodes 103 and 104 and generates plasma when a high frequency is applied between the upper electrode 104 and the lower electrode 103 of the parallel plate electrode and the plasma 110 is generated between the electrodes. 107 supplies plasma between the electrodes 103 and 104. The plasma source generates plasma by inductively coupled discharge, high frequency discharge or microwave discharge.
    公开号:KR19980070654A
    申请号:KR1019980001636
    申请日:1998-01-21
    公开日:1998-10-26
    发明作者:다키마사카즈；오오테라히로키；오오모리다츠오；니시카와가즈야스；신타니겐지
    申请人:기타오카다카시；미쓰비시덴키(주)；
    IPC主号:
    专利说明:

    Plasma processing equipment
    The present invention relates to a plasma processing apparatus for manufacturing a semiconductor by forming a thin film on the surface of a sample using a plasma or etching the surface of the sample.
    FIG. 6 is a cross-sectional configuration diagram showing a conventional dry etching apparatus described in, for example, Japanese Patent Application Laid-Open No. 7-78805. In the figure, reference numeral 10 denotes a vacuum container. The lower high frequency electrode 11 is provided below the inside of the vacuum container 10. The lower high frequency electrode 11 is electrically coupled with the vacuum container 10 by the insulator 21 without being directly coupled to the vacuum container 10. 12 is an upper high frequency electrode, is electrically connected with the vacuum vessel 10, and is fixed to earth potential. The lower high frequency electrode 11 is mounted with a semiconductor substrate (hereinafter referred to as "Wehara") 13 as a sample. A reactive gas inlet 14 for introducing a reactive gas as a process gas is provided at the upper portion of the vacuum vessel 10. The lower portion of the vacuum vessel 10 is provided with a reactive gas exhaust port 15 for exhausting the reactive gas in the vacuum vessel 10. The lower high frequency electrode 1 is provided with a refrigerant pipe 16 for cooling the lower high frequency electrode 11 to a predetermined temperature. One end of the refrigerant pipe 16 is a refrigerant inlet 17 and the other end is a refrigerant outlet 18. The high frequency power source 20 is connected to the lower high frequency electrode 11 via the cup spring capacitor 19. (7) is the generated plasma.
    Next, the operation will be described. A reactive gas is introduced from the reactive gas inlet 14 while exhausting the inside of the vacuum vessel 10 from the reactive gas exhaust port 15, and the inside of the vacuum vessel 10 is set to a predetermined pressure. In this state, when a high frequency is applied from the high frequency power supply 920 to the lower high frequency electrode 11, discharge is started between the electrodes 11 and 12 to generate the plasma 7 in a parallel flat shape. The generated parallel plate plasma 7 dry-etches the semiconductor substrate 13.
    The conventional plasma processing apparatus is constructed as described above, and generates a plasma uniformly in a large area with a simple configuration in order to form the parallel plate plasma 7 between the lower high frequency electrode 11 and the upper high frequency electrode 12. While there are features that can be done, it has the following drawbacks.
    In order to precisely etch a fine pattern on the semiconductor substrate 13 in dry etching, it is necessary to set the gas pressure low to increase the number of particles incident perpendicularly to the substrate 13 and to realize anisotropic etching. For example, on page 234, "Optical plasma processing" (Akiishi Gaso et al., Daily Newspaper), the gas pressure for obtaining anisotropic etching is described around 1x10 -3 (Torr). However, since the conventional plasma processing apparatus discharges between the positive electrodes 11 and 12 by high frequency discharge as described above, there is a limit to the pressure range in which the discharge is possible. In other words, in the parallel plate type plasma etching apparatus, the discharge holding pressure is relatively high, and, for example, the same book page 226 above describes that the gas pressure range is about 1 × 10 −1 to 1 × 10 −2 (Torr). Therefore, there is a problem that dry etching is not performed in a high vacuum atmosphere having a low gas pressure.
    SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to obtain a plasma processing apparatus capable of realizing the generation of a parallel flat plasma at low pressure currents, and capable of treating a large aperture sample uniformly and at high speed in a high vacuum atmosphere. It is.
    BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a sectional configuration diagram showing a plasma processing apparatus according to a first embodiment of the present invention.
    2 is a configuration diagram showing a part of a plasma source according to the first embodiment.
    3 is a configuration diagram showing a part of the plasma source according to the first embodiment;
    4 is a configuration diagram showing a part of a plasma source according to the plasma processing apparatus according to the second embodiment of the present invention.
    5 is a configuration diagram showing a part of a plasma source according to the plasma processing apparatus according to the third embodiment of the present invention.
    6 is a cross-sectional configuration diagram showing a conventional plasma processing apparatus.
    Explanation of symbols on the main parts of the drawings
    101: treatment chamber 102: exhaust port
    103: lower electrode 104: upper electrode
    105: Sample 106: high frequency power supply
    107: plasma source 108, 112, 122, 132, 142: communication portion
    109: pulse valve 110: parallel plate plasma
    111, 121, 131, 141: plasma chamber 113, 123: high frequency feed window
    114, 124: high frequency coil 116, 126, 136, 146: high frequency power supply
    133: high frequency electrode 143: microwave feeding window
    147: ring-shaped waveguide
    The plasma processing apparatus according to the first aspect of the present invention includes a processing chamber that accommodates parallel plate electrodes, and performs plasma processing by applying a high frequency between the upper electrode and the lower electrode of the parallel plate electrode and discharging the process gas between the electrodes. In the apparatus, a plasma source is provided around the electrode and generates a plasma, and the plasma is supplied from the plasma source to the positive electrode.
    In the plasma processing apparatus according to the second aspect of the present invention, in the first configuration, a plasma source is provided in a ring shape around the processing chamber and includes a communicating portion communicating with the processing chamber and a plasma chamber and a high frequency feeding window. It has a high frequency coil provided around it and configured to supply the plasma generated in the plasma chamber by the inductively coupled discharge by the high frequency coil and the high frequency feeding window to the positive electrode of the process chamber through the communication part.
    Moreover, the plasma processing apparatus which concerns on the 3rd structure of this invention is equipped with the plasma chamber in which a plasma source is provided in the ring shape around this process chamber, and has a communication part which communicates with a process chamber, and a ring-shaped discharge electrode in a 1st structure. The plasma generated in the plasma chamber in the high frequency discharge by the wall surface of the plasma chamber and the ring-shaped discharge electrode is configured to be supplied between the positive electrodes of the processing chamber via the communication section.
    In the plasma processing apparatus according to the fourth aspect of the present invention, in the first configuration, the plasma chamber and the microwave supplying chamber are provided in a ring shape around the processing chamber and communicate with the processing chamber and the microwave feeding window. It is configured to supply a plasma generated in the plasma chamber by microwaves propagating the ring-shaped waveguide to the power supply between the electrodes of the processing chamber via a communication section.
    The plasma processing apparatus according to the fifth aspect of the present invention is configured to pulse the gas into the plasma chamber in any of the second to fourth configurations.
    First embodiment
    Next, a dry etching apparatus will be described as a plasma processing apparatus according to the first embodiment of the present invention. 1 is a cross-sectional configuration diagram of a dry etching apparatus according to the present embodiment. In the figure, reference numeral 101 denotes a processing chamber, 102 denotes an exhaust port, and inside the treatment chamber 101, the lower electrode 103 on which the sample 105 is frozen and the upper electrode 104 provided to face the lower electrode 103 are stored. It is. The lower electrode 103 is vacuum sealed with the processing chamber 101 and electrically insulated from the processing chamber 101. The upper electrode 104 is electrically coupled with the process chamber 101 at an earth potential. Reference numeral 106 denotes an RF power source 107 for supplying high frequency power (hereinafter referred to as RF) power to the lower electrode 103, a plasma source for generating plasma, and 108 a process chamber 101 and a plasma source ( A plurality of holes 109 constituting a communication section with 107 are pulse valves for introducing, for example, an etching gas pulsed as a process gas. Reference numeral 110 is a plasma generated in the shape of the generated parallel plate.
    The plurality of holes 108 provided in the plasma source 107 are vacuum sealed around the wall of the processing chamber 101 and are supplied to the processing chamber 101 without leaking gas introduced into the plasma source 107 to the outside.
    In the dry etching apparatus configured as described above, the etching gas introduced into the plasma source 107 is converted into plasma by the excitation source. The generated plasma is ejected from the plurality of holes 108 between the upper electrode 104 and the lower electrode 103 of the processing chamber 101. When RF power is applied to the lower electrode 103, the upper electrode 104 and the lower electrode 103 are discharged to generate a parallel flat plasma, and the sample 105 etched on the lower electrode 103 is etched. In this configuration, since parallel plate plasma is generated, etching can be performed corresponding to a large diameter sample.
    Next, the plasma source according to the present embodiment will be described in detail. FIG. 2 is a configuration diagram showing a part of a plasma source relating to a dry etching apparatus, and uses RF inductively coupled discharge as an excitation method of plasma. In the figure, reference numeral 111 denotes a ring-shaped plasma chamber provided around the wall of the processing chamber 101 and includes a plurality of holes 112 and an RF power supply window 113. The hole 112 has a shape close to a circle, for example. The RF power supply window 113 is suitably made of, for example, a quartz glass, a ceramic, or a dielectric, and is vacuum sealed with the plasma chamber 111. The RF coil 114 is wound in a spiral form around two sides of the RF power supply window 113, that is, the atmosphere of the plasma chamber 111. The number of windings and the shape of the RF coil 114 and the distance between the plasma chamber 111 and the RF coil 114 are optimized by the size and plasma characteristics of the plasma chamber 111. RF power is supplied to the RF coil 114 by the second RF power supply 116.
    In the above configuration, the pulse valve 109 is operated to introduce, for example, chlorine gas into the plasma chamber 111 pulsed as the etching gas. The introduced gas is supplied to the process chamber 101 from the plurality of holes 112 of the plasma chamber 111 and exhausted from the exhaust port 102.
    Next, when RF power is supplied to the RF coil 114 from the second RF power supply 116, a high frequency power is supplied into the plasma chamber 111 through the ring-shaped RF power supply window 113 to generate an inductively coupled plasma. . The generated plasma is ejected from the plurality of holes 112 in the plasma chamber 111 to the processing chamber 101 by the pressure difference.
    Here, even if the gas is introduced normally without using the pulse valve 109, almost a predetermined effect can be obtained. In this embodiment, the pulse valve 109 supplies gas to the plasma chamber 111 in a pulsed manner, and the plasma can be ejected from the plurality of holes 112 into the processing chamber more efficiently than the normal supply. This is because the pressure of the plasma chamber 111 and the processing chamber 101 is supplied by pulsed supply of gas by opening and closing the valve as described in Japanese Patent Application No. Hei 6-50536, "Plasma Processing Apparatus", which was previously filed. This is because the difference can be kept large and the amount of ejection from the hole 112 increases. This pressure difference is maintained in, for example, one row or more, and the ejection force is also increased. For this reason, the generated plasma can be reliably transported to the center of the space between the positive electrodes 103 and 104, and the plasma density can be increased.
    When RF power is supplied to the lower electrode 103 as shown in FIG. 1 in a state where the plurality of holes 112 are ejected from the plurality of holes 112, the parallel plate plasma is formed between the upper electrode 104 and the lower electrode 103. 110 is generated. In this case, the discharge of the pressure in the processing chamber 101 is maintained even before or after a high degree of vacuum, for example, 1 × 10 −3 (Torr), which cannot be discharged in a normal parallel flat discharge. This is because the plasma ejected from the plasma chamber 111 becomes the type of discharge between the parallel plate electrodes 103 and 104 and the discharge is maintained even at low pressure.
    For example, if the time average pressure of the plasma chamber 111 is set to about 1 × 10 −2 (Torr), the time average pressure of the process chamber 101 is about 1 × 10 −3 (Torr), and the low pressure discharge causes Generation can be realized. Therefore, the large aperture wher is plasma treated uniformly and at high speed in a high vacuum atmosphere.
    As a result of etching the polysilicon material of the gate circuit in the semiconductor manufacturing with the etching apparatus according to the present embodiment, when etching the sample 105 having an 8 inch size, the etching rate is about 100 nm / min and the surface of the sample 105 The uniformity of the etching rate was treated at 5%.
    In addition, the installation of an RF coil is not limited to the above-mentioned structure, The structure shown in FIG. 3 may be sufficient. In FIG. 3, reference numeral 121 denotes a ring-shaped plasma chamber provided around the wall of the processing chamber 101 and includes a plurality of holes 122 and an RF power supply window 123. The RF power supply window 123 is vacuum sealed with the plasma chamber 121. On the upper part of the RF feed window 123, two coils of the RF coil 124 are wound in a spiral shape. RF power is supplied to the RF coil 124 by the second RF power supply 126. Even in this configuration, the same operation as described above is achieved.
    In addition, the size and number of the holes 112 and 122 are the capacity of evacuation of the vacuum pump (doxy) to exhaust the inside of the process chamber 101, the amount of gas supplied by the pulse valve 109, the process chamber 101 and the plasma chamber 111. And 121), and the pressure difference is appropriately determined.
    Second embodiment
    Next, a plasma processing apparatus according to a second embodiment of the present invention will be described. 4 is a configuration diagram showing a part of a plasma source according to the etching apparatus according to the present embodiment. In the figure, reference numeral 131 denotes a ring-shaped plasma chamber provided around the wall of the processing chamber 101, and the ring-shaped RF electrode 133 is provided at a position facing the plurality of holes 132 in the center portion thereof. The first wall surface 131a on which the hole 132 of the plasma chamber 131 is provided, the second wall surface 131b facing the same, and the RF electrode 133 are provided concentrically and have a first wall surface. The distance L1 of the 131a and the RF electrode 133 is configured to be smaller than the distance L2 of the second wall surface 131b and the RF electrode 133.
    In addition, RF power is supplied from the second RF power source 136 to the RF electrode 133 via the RF power supply unit 134 vacuum-sealed from the wall of the plasma chamber 131.
    In this embodiment, the operation of plasma generation in the plasma chamber 131 is different from that in the first embodiment, and the overall structure of the apparatus is the same as that in FIG. 1 and the plasma processing is performed on the sample 105 by the same operation as in the first embodiment. Is performed.
    That is, the chlorine gas supplied from the pulse valve 109 becomes plasma in the plasma chamber 131, is introduced into the processing chamber 101 through the hole 132, and the sample 105 is etched in a high vacuum atmosphere.
    In the plasma chamber 131, when RF power is supplied from the RF power source 136 to the RF electrode 133, a parallel flat plasma is generated between the RF electrode 133 and the first wall surface 131a. In this case, by setting the RF electrode 133 closer to the hole 132 as L1L2, discharge is efficiently performed between the RF electrode 133 and the first wall surface 131a, and a parallel plate plasma is formed near the hole 132. do. Again, since the first wall surface 131a and the RF electrode 133 are provided concentrically, plasma is uniformly generated around the processing chamber 101.
    As described above, in the parallel plate type plasma etching apparatus, the discharge holding pressure is about 1 × 10 −1 to 1 × 10 −2 (Torr), for example, and the plasma chamber 131 is stored at this gas pressure. On the other hand, in the processing chamber 101, plasma is ejected between the electrodes 103 and 104 from the surrounding hole 132, and the plasma becomes a discharge type, so that discharge can be performed at a high hole of about 1 × 10 -3 (Torr). Thus, a plasma processing apparatus is obtained in which a large aperture weha is plasma treated at a uniform and high speed.
    Third embodiment
    Next, the plasma processing state according to the third embodiment of the present invention will be described. 5 is a configuration diagram showing a part of a plasma source relating to the etching apparatus according to the present embodiment. In the figure, reference numeral 141 denotes a plasma chamber composed of a plurality of holes 142 and microwave feeding water 143 communicating with the processing chamber 101. The microwave feeding window 143 is formed of, for example, a dielectric such as quartz glass or cellulosic glass, and is vacuum-sealed with the plasma chamber 141. A ring-shaped waveguide 147 is provided adjacent to the atmosphere side of the microwave feeding window 143. The ring waveguide 147 is formed of, for example, a metal such as copper or aluminum, and surrounds the plasma chamber 141 so that the E surface 144 (short side) of the ring waveguide 147 has a microwave feed window 143. ). Here, the E surface 144 is composed of a part of the conductor 145 and the microwave feeding window 143 and forms a ring waveguide 147 at the H surface 146 (true side). Microwaves are propagated in the ring-shaped waveguide 147 by feeding microwaves in a portion not shown.
    In the present embodiment, the operation of plasma generation is different in the plasma chamber 141 from the first embodiment and the second embodiment, and the entire etching apparatus has the same configuration as that in FIG. Plasma treatment is performed. That is, the chlorine gas supplied from the pulse valve 109 becomes plasma in the plasma chamber 141 and is ejected from the plurality of holes 142 into the processing chamber 101 by the pressure difference. In this case, when RF power is supplied to the lower electrode 103, the parallel plate plasma 110 is generated between the upper electrode 104 and the lower electrode 103.
    Propagating microwaves in the ring waveguide 147 in a manner as shown in US Pat. No. 5,359,177 here causes the microwaves to propagate within the ring waveguide 147 and from the microwave feed window 143 in contact with the E plane 144. It is supplied to the chamber 141. Microwaves supplied to the plasma chamber 141 are microwave-discharged in the plasma chamber 141 to generate microwave plasma.
    As the microwave frequency to be used, for example, 2.45 GHz is used.
    The surface in contact with the microwave window 143 may be configured by the H surface 146 (long side) of the ring waveguide 147.
    Also in this embodiment, since the plasma ejected from the plasma chamber 141 becomes the type of discharge between the parallel plate electrodes 103 and 104 and the discharge is maintained even at low pressure, the pressure in the processing chamber 101 is not maintained in the normal parallel plate discharge. No high vacuum is maintained even before or after, for example, 1 × 10 −3 (Torr).
    In addition, since clean plasma is generated in the plasma chamber 141 by the microwave discharge, a high quality sample with less contamination and dust is processed.
    In the first embodiment to the third embodiment, a plurality of circular holes are provided around the processing chamber 101, but the plasma generated in the plasma chamber is composed of one continuous slit along the circumference of the processing chamber 101. You may comprise so that it may introduce.
    Moreover, although the etching apparatus was demonstrated in 1st Embodiment-3, the same effect is acquired even if it applies to plasma processing apparatuses, such as a plasma CVD apparatus and a plasma spatter apparatus. For example, when SiH 4 of a silane system is introduced as a CVD gas, the gas can be decomposed by discharge to form a silicon deposition film on the sample.
    As described above, according to the first configuration of the present invention, in the plasma processing apparatus for applying a high frequency between the upper electrode and the lower electrode of the parallel plate electrode and discharging the process gas between the electrodes, the plasma processing apparatus is disposed around the electrode and generates plasma. By providing a plasma source and supplying plasma between the electrodes from the plasma source, a plasma processing apparatus can be produced in which a large area of parallel flat plasma is generated in a high vacuum atmosphere, and a large aperture sample is uniformly and accurately processed.
    According to a second aspect of the present invention, a processing chamber for storing parallel plate electrodes is provided in a ring shape around the processing chamber and includes a communicating portion communicating with the processing chamber, a plasma chamber having a high frequency feeding window, and a high frequency coil provided around the high frequency feeding window. In addition, the plasma generated in the plasma chamber by the inductively coupled discharge by the high frequency coil and the high frequency feed window is supplied to the electrodes of the processing chamber via the communication unit, thereby increasing the plasma density generated in the plasma chamber and the high density plasma between the parallel plate electrodes of the processing chamber. There is an effect that a plasma processing apparatus capable of supplying and capable of high-speed processing of a sample can be obtained.
    According to a third aspect of the present invention, there is provided a processing chamber accommodating a parallel plate electrode, a plasma chamber provided with a communication portion communicating with the processing chamber in a ring shape and communicating with the processing chamber, and having a wall surface of the plasma chamber. Plasma generated in the plasma chamber by the high frequency discharge by the ring-shaped discharge electrode is configured to supply between the electrodes of the processing chamber via the communication unit, thereby increasing the uniformity of the plasma density generated in the plasma chamber and uniform processing of the sample. There is an effect obtained.
    According to a fourth aspect of the present invention, a processing chamber for storing parallel plate electrodes is provided in a ring shape around the processing chamber and has a communication portion communicating with the processing chamber, a plasma chamber having a microwave feeding window, and a ring-shaped waveguide surrounding the microwave feeding window. It is configured to supply the plasma generated in the plasma chamber by the microwaves propagating in the ring-shaped waveguide between the electrodes of the processing chamber via the communication section, thereby increasing the plasma density generated in the plasma chamber and supplying high density plasma between the parallel plate electrodes of the processing chamber. In addition, since the plasma generated in the plasma chamber is again generated by the microwave discharge, there is an effect of obtaining a plasma processing apparatus capable of processing a high quality sample with little contamination or dust.
    According to the fifth aspect of the present invention, in addition to the effect of any one of the second to fourth configurations, the plasma chamber is supplied with pulsed gas to the plasma chamber in any one of the second to fourth configurations. There is an effect of obtaining a plasma processing apparatus capable of efficiently ejecting the plasma generated in the process chamber into the processing chamber.
    权利要求:
    Claims (3)
    [1" claim-type="Currently amended] A plasma processing apparatus comprising: a processing chamber for storing parallel plate electrodes; a high frequency is applied between an upper electrode and a lower electrode of the parallel plate electrode, and a process gas is discharged between the electrodes to perform the treatment;
    And a plasma source disposed around the electrode and generating a plasma, and supplying plasma between the electrodes from the plasma source.
    [2" claim-type="Currently amended] The method of claim 1,
    The plasma source includes a plasma chamber having a communicating portion communicating with the processing chamber, a plasma chamber having a high frequency feeding window, and a high frequency coil installed around the high frequency feeding window, the high frequency coil and the high frequency feeding window being disposed around the processing chamber. And a plasma generated in the plasma chamber by an inductively coupled type discharge to be supplied between the electrodes of the processing chamber via a communication unit.
    [3" claim-type="Currently amended] The method of claim 2,
    And plasmaally supply gas to the plasma chamber.
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    同族专利:
    公开号 | 公开日
    TW356566B|1999-04-21|
    KR100269552B1|2000-10-16|
    JPH10223607A|1998-08-21|
    US6020570A|2000-02-01|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1997-02-03|Priority to JP97-020550
    1997-02-03|Priority to JP9020550A
    1998-01-21|Application filed by 기타오카다카시, 미쓰비시덴키(주)
    1998-10-26|Publication of KR19980070654A
    2000-10-16|Application granted
    2000-10-16|Publication of KR100269552B1
    优先权:
    申请号 | 申请日 | 专利标题
    JP97-020550|1997-02-03|
    JP9020550A|JPH10223607A|1997-02-03|1997-02-03|Plasma treating apparatus|
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